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US Patent Issued to City University of Hong Kong on July 14 for "Film of graphitic carbon nitride for photoanode and a method for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,680,182, issued on July 14, was assigned to City University of Hong Kong (Kowloon, Hong Kong). "Film of graphitic carbon nitride for photoanode... और पढ़ें


US Patent Issued on July 14 for "Artificial intelligence pressure control multiple track injection liquid-to-gas conversion method" (Canadian, American Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,680,183, issued on July 14. "Artificial intelligence pressure control multiple track injection liquid-to-gas conversion method" was invented by... और पढ़ें


US Patent Issued to Delta Faucet on July 14 for "Ozone generator for a faucet" (Indiana Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,680,184, issued on July 14, was assigned to Delta Faucet Co. (Indianapolis). "Ozone generator for a faucet" was invented by Patrick B. Jonte (Z... और पढ़ें


US Patent Issued to ENEOS, DE NORA PERMELEC on July 14 for "Organic hydride production device, water removal device, and water removal method" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,680,185, issued on July 14, was assigned to ENEOS Corp. (Tokyo) and DE NORA PERMELEC LTD (Fujisawa, Japan). "Organic hydride production device,... और पढ़ें


US Patent Issued to EBARA on July 14 for "Apparatus for plating and method of manufacturing apparatus for plating" (Japanese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,680,186, issued on July 14, was assigned to EBARA Corp. (Tokyo). "Apparatus for plating and method of manufacturing apparatus for plating" was ... और पढ़ें


US Patent Issued to EBARA on July 14 for "Plating apparatus" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,680,187, issued on July 14, was assigned to EBARA Corp. (Tokyo). "Plating apparatus" was invented by Tsubasa Ishii (Tokyo), Masashi Shimoyama (... और पढ़ें


US Patent Issued to BOYA ADVANCED MATERIALS on July 14 for "Open Czochralski furnace for single crystal growth" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,680,188, issued on July 14, was assigned to BOYA ADVANCED MATERIALS Co. LTD. (Meishan, China). "Open Czochralski furnace for single crystal gro... और पढ़ें


US Patent Issued to SILTRONIC on July 14 for "Process for manufacturing a monocrystalline silicon semiconductor wafer, and monocrystalline silicon semiconductor wafer" (German, Polish Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,680,189, issued on July 14, was assigned to SILTRONIC AG (Munich). "Process for manufacturing a monocrystalline silicon semiconductor wafer, an... और पढ़ें


US Patent Issued to SICRYSTAL on July 14 for "System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing same" (German Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,680,190, issued on July 14, was assigned to SICRYSTAL GMBH (Nuremberg, Germany). "System for manufacturing a high-quality semiconductor single ... और पढ़ें


US Patent Issued to Epicrew on July 14 for "Vapor phase growth system and method of producing epitaxial wafer" (Japanese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,680,191, issued on July 14, was assigned to Epicrew Corp. (Ohmura, Japan). "Vapor phase growth system and method of producing epitaxial wafer" ... और पढ़ें